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Analysis of breakdown phenomena in 4H-SiC p-n junction diodes with a wide range of doping concentration
Analysis of breakdown phenomena in 4H-SiC p-n junction diodes with a wide range of doping concentration
2017
Xilun Chi
Hiroki Niwa
Tsunenobu Kimoto
Keywords:
Condensed matter physics
p–n junction
Doping
Optoelectronics
Diode
Materials science
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