Recent results from EUVL patterned mask inspection using projection electron microscope system
2014
The recent status of a newly developed PEM pattern inspection system for hp 16 nm node
defect detection is presented. A die-to-die defect detection sensitivity of the developing system is
also investigated. A programmed defect mask was used for demonstrating the performance of the
system. Defect images were obtained as difference images by comparing the PEM images “withdefects”
to the PEM images “without-defects”. This image-processing system was also developed
for die-to-die inspection. Captured images of extrusion and intrusion defects in hp 64 nm L/S pattern
were used for detection. 12 nm sized intrusion defect, that was smaller than our target size for hp 16
nm defect detection requirement, was identified without false defects. To improve the performance
of hp 16 nm patterned mask inspection for hp 11 nm EUVL patterned mask inspection, defect
detection signal characteristics, which depend on hp 64 nm pattern image intensity deviation on
EUVL mask, was studied.
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