Difficulty of carrier generation in orthorhombic PbO

Polycrystalline β-PbO films were grown by pulsed laser deposition in atmospheres ranging from oxygen-poor (the oxygen pressure of 0.01 Pa) to oxygen-rich (13 Pa) conditions, and the oxygen chemical potential was further enhanced by ozone annealing to examine hole doping. It was found that each of the as-grown β-PbO films showed poor electrical conductivity, σ < 1.4 × 10−7 S cm−1, regardless of the oxygen pressure. The density functional calculations revealed that native defects including Pb and O vacancies have deep transition levels and extremely high formation enthalpies, which indicates difficulty of carrier generation in β-PbO and explains the experimentally observed poor electrical conductivity. The analysis of the electronic structures showed that the interaction between Pb 6s and O 2p orbitals is weak due to the deep energy level of Pb 6s and does not raise the valence band maximum (VBM) level unlike that observed in SnO, which is also supported by ultraviolet photoemission spectroscopy measurement...