Synthesis of heterojunction layers of graphene/MoS2 and its characterization

The synthesis of atomically thin layered MoS2/Graphene heterostructure is of great interest in optoelectronic devices because of their unique properties. Herein, we present a synthesis method to prepare heterostructure of MoS2/graphene using low pressure chemical vapor deposition. Atomic force microscopy, Raman spectra demonstrated that MoS2 film on graphene exhibited good thickness uniformity. This novel sensing structure based on a 2D heterostructure promises to provide a simple route to an essential sensing platform for wearable electronics.The synthesis of atomically thin layered MoS2/Graphene heterostructure is of great interest in optoelectronic devices because of their unique properties. Herein, we present a synthesis method to prepare heterostructure of MoS2/graphene using low pressure chemical vapor deposition. Atomic force microscopy, Raman spectra demonstrated that MoS2 film on graphene exhibited good thickness uniformity. This novel sensing structure based on a 2D heterostructure promises to provide a simple route to an essential sensing platform for wearable electronics.