Lithographic performance of a negative resist under scattering with angular limitation for projection electron lithography exposure at 100 keV

Scattering with angular limitation for projection electron lithography (SCALPEL)TM [S. D. Berger and J. M. Gibson, Appl. Phys. Lett. 57, 153 (1990)] has been used to evaluate the lithographic performance of a negative‐acting silicon containing chloromethylstyrene resist at 100 keV [A. E. Novembre, M. J. Jurek, A. Kornblit, and E. Reichmanis, Polym. Eng. Sci. 29, 920 (1989)]. This article presents the preliminary evaluation of the resist in a small field of view SCALPEL machine using masks with a membrane area of 1 mm2. A resolution of 0.15 μm was obtained at 61 μC/cm2. Furthermore, the good electron‐beam sensitivity of this well‐characterized negative resist has allowed us to optimize the alignment, astigmatism, and focus of the experimental tool.