Enhanced Germanium-Tin P-Channel FinFET Performance using Post-Metal Anneal

The impact of post-metal annealing (PMA) on the electrical characteristics of GeSn p-FinFETs was investigated. PMA increased the on-state current (I_{ON}) and intrinsic transconductance (G_{m,\ int}), and reduced the subthreshold swing (S), due to improved gate stack quality. GeSn p-FinFETs with 400 °C PMA exhibit a high field hole mobility (μ_{eff}) of 295 cm 2 /V·s at inversion carrier density N_{inv} of 8\times 10^{12} cm 2 /V·s. This is among the highest μ_{eff} achieved for Ge-based p-FinFETs.