Mg doping of GaInP grown by chemical beam epitaxy using bis‐cyclopentadienyl magnesium

We have investigated the p‐type doping of GaInP grown by chemical beam epitaxy using bis‐cyclopentadienyl magnesium (Cp2Mg). Hole concentrations up to the 1018 cm−3 level have been achieved for substrate temperature as high as 550 °C and Mg incorporation was found to grow linearly with the Cp2Mg flow rate in this range. The doping concentration decreases as the substrate temperature increases with an activation energy of 2.15 eV (50 kcal/mol). Two other parameters are the V/III ratio and the growth rate which both enhance the Mg doping when increased.