A Design of GaN Power Amplifier for Crystal-less Wireless System

This study presents the design of power amplifier (PA) in 60 nm GaN HEMT technology. A customized transistor model enables the designing circuits operating at E-band. The all matching network of the PA was composed of equivalent transformer circuit to reduce matching loss. And then, equivalent transformer is several advantages without any additional inductive devices so that a wideband power characteristic can be achieved. The designed die area is 3,330 um${\mathrm{ m}}\times 2$,290 um. The designed results at center frequency achieved the small signal gain of 12.1 dB, the saturated output power (Psat) of 28 dBm, and the power added efficiency (PAE) of 20.2% at the supply voltage of 6 V.