Light-emitting diode with high expanding effect

The invention discloses a light-emitting diode (LED) with a high expanding effect. The LED comprises a substrate on which an LED chip epitaxial layer is arranged. The two side surfaces of the LED chip epitaxial layer are provided with first alternate multilayer film structures. The other two side surfaces of the LED chip epitaxial layer are provided with second alternate multilayer film structures. The N-type and P-type current expanding effects of the LED are effectively enhanced. The electrode light-shielding area is not increased. The N-type current expanding effect of a large-size chip is enhanced.