Nonvolatile memory device and a manufacturing method thereof

Method of manufacturing a nonvolatile memory element, the first lower electrode layer (108), the current control layer (109), the first upper electrode layer (110) is formed, on the first upper electrode layer (110) , the second lower electrode layer (311), forming a resistance variable layer (112) and a second upper electrode layer (313), the second upper electrode layer (313) and the resistance change layer (112) a step of patterning the second lower electrode layer (311), the rate of etching at least a second upper electrode layer (313) and the second lower electrode layer than the resistance change layer (112) (311) is slow by etching, the second lower electrode layer (311) as a mask, a current is patterned first upper electrode layer (110) the current control layer (109) the first lower electrode layer (108) forming a control element (142), a current control element And forming a resistance variable anti element having a smaller area than the area of ​​the (142).