Depth profiling of 35Cl implanted into Si using SPIX

Abstract Particle-induced X-ray excitation measurements are used to deduce the depth distribution for 35 Cl ions implanted at 90 keV into a silicon substrate using a novel experimental technique. The emitted Cl K X-ray yield was measured for grazing emergent angles to enhance the surface sensitivity. The absolute 35 Cl concentration as a function of depth was deduced from the variation of the X-ray yield with emission angle. The depth resolution for 35 Cl implanted to a depth of ∼ 110 nm is ∼ 8 nm.