Optical spectra and Auger recombination in SiGe/Si heterostructures in 10 μm range of wavelengths

Abstract We discuss the possibility of using p -type SiGe/Si multiple quantum well structures for infrared detection. We calculated the miniband dispersion in these structures using an empirical pseudopotential method including the effects of spin and strain. The absorption spectra of these structures is discussed and the microscopic origin of the absorption peaks identified. We present comparisons between our calculated absorption response and the experimental spectra obtained in recent experiments for both parallel and normal incidence light. We also report full-scale pseudopotential calculations of the Auger recombination in these structures and present a fresh discussion of the conditions which could help to minimize this recombination.