A low noise preamplifier for silicon drift detectors

The paper describes a preamplifier, elaborated to process the signals of silicon X-ray drift detectors. The preamplifier has been designed in CMOS 0.35 um technology and optimized for operation with detectors, having capacitances of 100 fF. The feedback capacitance of 10 fF provides a gain of 100 mV/fC, ENC at T = −30°C equals 4 e (simulation result) at using shaper of the 6th order with a time constant of 8 us. Power consumption is 1.3 mW (preamplifier and shaper).