同位体選択的赤外多光子解離されたフロロシランからの同位体濃縮 Si 薄膜の作製

Fabrication of isotopically enriched silicon thin film by plasma-enhanced chemical vapor deposition (PE-CVD) has been performed with source gas mixtures of SiF4, H2 and Ar. Enriched SiF4 gases with 30Si exceeding 25% were obtained from isotopically selective infrared multiphoton dissociation of hexafluorodisilane. The crystalline silicon films were successfully grown by a remote type microwave PE-CVD system on a quartz glass and Si wafers at substrate temperature of 623-1023 K. Secondary ion mass spectroscopy and energy-dispersive X-ray spectroscopy analyses indicated that the films had small impurity contents. The isotopic fraction of the grown Si film almost coincided with that of source gas.