Lateral bandgap engineering for InP-based photonic integrated circuits

It is demonstrated that both SMG (shadow masked growth) and SG (selective growth) together with the use of QWs (quantum wells) can change the bandgap of InP-based materials laterally over the substrate. The thickness change that can be obtained with both techniques and the corresponding deviation from stoichiometry are competitive. The authors present the basic principle of both techniques and the basic characteristics (thickness and composition change). They have fabricated a multiwavelength laser array using SMG with a wavelength span of 130 nm around 1550 nm. >