Achieving nearly free fermi-level movement and V th engineering in Ga 2 O 3 (Gd 2 O 3 )/In 0.2 Ga 0.8 As

Feverish researches on III–V MOSFETs using high-K/metal gates are carried out for beyond the 22–16 nm node CMOS technology. For integrated circuits, however, precise control of the threshold voltage (Vh) is very critical, which has not been widely studied for III–V MOS devices. Very impressive device performance in terms of drain currents and transconductance has been achieved in inversion-channel In 0.53 G 0.47 As MOSFETs [1, 2]. To work on the lower In-content in InGaAs based inversion-channel devices may alleviate the adverse affects like drain-induced barrier lowering (DIBL) and band-to-band tunneling (BTBT). In this work, we report a systematic study on n- and p-type Al 2 O3/Ga2O3(Gd 2 O3) [GGO]/In0.2Ga 0.8 As/GaAs MOS capacitors (MOSCAPs) using metal gates Al, TiN, and Ni of work functions of 4.1, 4.8, and 5.2 V, respectively. We demonstrated for the first time nearly ideal characteristics of the In 0.2 Ga 0.8 As based MOSCAPs, and remarkably well-controlled V th .