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Reduced Cell Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Supply Voltage of 0.4V
Reduced Cell Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Supply Voltage of 0.4V
2013
Mizutani Tomoko
Yamamoto Yoshiki
Makiyama Hideki
Shinohara Hirofumi
Iwamatsu Toshiaki
Oda Hidekazu
Sugii Nobuyuki
Hiramoto Toshiro
Keywords:
Voltage
Static random-access memory
Electronic engineering
Silicon
Materials science
Optoelectronics
Correction
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