DEFECTS AND IMPURITY CENTERS, DISLOCATIONS, AND PHYSICS OF STRENGTH Radiation Damage in Diamonds Subjected to Helium Implantation

Optical spectroscopy and volume "swelling" measurements were used to study radiation damage and graphitization of diamonds implanted with helium ions at temperatures from 77 to 373 K. It is established that the radiation damage decreases as the implantation temperature increases. This effect is explained by radi- ation-stimulated annealing of defects caused by damaging. It is shown that the result of formation of a graphi- tized layer is determined not by the implantation dose but by the level of radiation damage. It is found that the lower the implantation temperature, the lower the annealing temperatures required for the formation of a graph- itized layer. It is shown that annealing of radiation defects and the formation of a graphitized layer in a diamond occur up to 1600 ° C.