Donor- and Acceptor-Like Center Revealing by Photoconductivity of Amorphous Thin As2Se3 Films

Abstract : Measurements of photoconductivity and relaxation of positive and negative charge in amorphous thin As2 Se3 layers are discussed. Photosensitive donor and acceptor like centers of 1.05 eV and 0.76 eV energies from valence band were revealed. These energies are constant and independent of light intensity in the range l.5x10(9) - l.5xlO(15) quanta/(cm(2)s) and of energy of quanta. Wide quasicontinuously distribution trap centers with maximums at 0.62, 0.87 and 1.05 eV were found by relaxation measurements of positive and negative charge.