Hybrid molecular beam epitaxy for the growth of complex oxide materials

Abstract Hybrid molecular beam epitaxy (HMBE) uses both solid and metal-organic sources, and has been highly successful in the growth of complex oxides that have poorly volatile constituents. The high volatility of the metal-organic precursor allows for high growth rates, improved flux stability, and adsorption-controlled growth, which lead to unprecedented stoichiometry control. This chapter discusses the principles of HMBE of complex oxide materials, the importance of the MBE growth window, and the requirements for the metal-organic precursors. We present examples of the excellent electrical quality of complex oxide films grown by HMBE.