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High performance X-band power amplifier MMIC using a 0.25 ㎛ GaN HEMT technology
High performance X-band power amplifier MMIC using a 0.25 ㎛ GaN HEMT technology
2019
Bok-Hyung Lee
Byung-Jun Park
Sun-Youl Choi
Byeong-Ok Lim
Joo-Seoc Go
Kim Sungchan
Keywords:
Amplifier
High-electron-mobility transistor
Materials science
X band
Monolithic microwave integrated circuit
Optoelectronics
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