Time-resolved photoluminescence on ion doped CdWO4 thin films prepared with pulsed laser deposition

Samarium-, nickel-, cesium-ion-doped and -undoped CdWO4 thin films are prepared by pulsed laser deposition (PLD) method. Photoluminescence (PL), cathode luminescence (CL), and x-ray excited luminescence (XL) are studied on these thin films. Luminescence spectra are deconvoluted to three luminescence species typically at 2.77, 2.48, and 2.18 eV. Luminescence intensities and the relative contribution of three deconvoluted components are compared with those on the undoped CdWO4 (010) single crystal surface. PL intensity on the undoped thin film can be compared to that on the (010) single crystal surface. Not only CL and XL intensities but also PL intensity drops drastically on ion-doped CdWO4 thin films. However, the emission component at about 2.2 eV is dominant and the relative contribution of 2.77 eV is diminished on the ion-doped PLD thin films. The x-ray diffraction data indicates that the (002) plane is most intense on these films and the peak shifts to lower 2θ value on the ion-doped CdWO4 thin films....