Device Structures and Characteristics of Laser Diodes with ZnMgSSe Cladding Layers

ZnSe based laser diodes exhibit best initial performances such as low threshold current with ZnCdSe/ZnSSe/ZnMgSSe SCH-SQW structure. The device lifetime is improved with the ZnCdSe/ZnSSe/ZnMgSSe SCH-MQW structure. Laser emission of 471 nm wavelength is obtained under pulsed injection at room temperature with ZnSe/ZnMgSSe DH structure.