Electrical properties of Ge‐doped p‐type AlxGa1−xAs

The Hall effect and conductivity of Ge‐doped p‐type AlxGa1−xAs has been studied in the temperature range from 77 to 500 K. The experimental results have been analyzed to yield the acceptor and donor concentration and the Ge activation energy. The samples have been found to be heavily compensated with an average compensation ratio of about 0.4. The activation energy was found to increase strongly with Al content for x<0.6 and to decrease with Ge concentration.