Zener breakdown one kind of a small high-pressure back esd protection device structure Lag scr

Zener breakdown of one kind of high-voltage back small hysteresis SCR ESD protection device structure may be used for high-voltage ESD protection circuit on the IC chip. Includes a P-type substrate, N-type buried layer, first N-well, P-well, P-doped sink, a second N-well isolation region, a first N +, P + first, second N +, P + second, first three N +, the third P +, a fourth N +, P + a fourth, a fifth N +, a fifth P +, a metallic anode, a cathode metal. Wherein a first metal anode, a cathode metal, a first N +, P + first, third N +, P + third, second N +, P + second metal or a second anode, a cathode metal, a fifth N +, P + V The third N +, P + third, fourth N +, P + constituting a fourth Zener breakdown ESD current discharge path. Zener breakdown ESD current discharge path not only enhance the ESD robustness of the device, the device may further improve the sustain voltage is applied to the high-pressure narrow ESD ESD protection window.