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Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator
Highly reliable a-InGaZnO thin-film transistors with fluorine in a gate insulator
2015
Yamazaki Haruka
Ishikawa Yasuaki
Fujii Mami
Juan Paolo Bermundo
Takahashi Eiji
Andoh Yasunori
Uraoka Yukiharu
Keywords:
Gate dielectric
Thin-film transistor
Fluorine
Insulator (electricity)
Electronic engineering
Materials science
gate insulator
Optoelectronics
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