High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors

The authors report a very high capacitance ratio of /spl sim/10:1:1 for a heterostructure varactor. To realise this, a new InGaAs/AlAs quantum well-barrier scheme has been fabricated in GaAs technology. The capacitance modulation involves carrier dynamics via the quantum well eigenstates in contrast to the conventional depletion operation mode.