Ferroelectric integrated circuit and manufacture therefor

PURPOSE: To provide a circuit of excellent reliability and a high density in relatively simple constitution by providing a ferroelectric device provided with a ferroelectric layer for covering at least a part of a conductive barrier layer and at least a part of a transistor gate or the like. CONSTITUTION: This circuit is provided with a semiconductor substrate 30, a transistor 12 formed on the substrate 30 and provided with the transistor gate 12A, an insulation layer 24 for covering the transistor gate 12A and a contact hole 26 reaching the substrate 30 formed on the insulation layer 24. Further, it is provided with the conductive barrier layer 22 in contact with the substrate 30 through the contact hole 26 for covering at least a part of the insulation layer 24 and at least a part of the gate 12A and the ferroelectric device 24 provided with the ferroelectric layer 20 for covering at least a part of the conductive barrier layer 22 and at least a part of the transistor gate 12A. The ferroelectric device 14 is a ferroelectric capacitor provided with a bottom part electrode 14A, the ferroelectric layer 20 and an upper electrode 14B for instance. COPYRIGHT: (C)1994,JPO