Simulation of SRAM SEU Sensitivity at Reduced Operating Temperatures.

Abstract: A new NanoTCAD-to-Spectre interface is applied to perform mixed-mode SEU simulations ofan SRAM cell. Results using newly calibrated TCAD cold temperature substrate mobility models, andBSIM3 compact models extracted explicitly for the cold temperature designs, indicate a 33% reduction inSEU thresholdfor the range of temperatures simulated. Motivation► Limited available analyses indicate that single event responsemay be exacerbated by cold temperature 1-3 ► Desire to understand worst case SEU threshold of CMOS SRAMin mixed signal system designed using IBM 5AM SiGe BiCMOS 4 to know if higher level mitigation is sufficient approachMethodology►Calibrate 3D NanoTCAD model vs: Charge collectionPDK/Spectre-generated IV curves measured on transistors 5 . TUD _ oo.4F L? n e. ea_ alM Vd(VI ►Simulate the temperature dependence of SEU thresholds ofSRAM cell using mixed-mode using: • A new NanoTCAD-to-Spectre interface • BSIM3 models extracted explicitly for the cold temp design • Newly calibrated TCAD cold temp substrate mobility models