Polycrystalline silicon production system

A polycrystalline silicon production system comprises a reduction furnace provided with a silicon core, a heat exchanger, a condenser communicated with the reduction furnace through the heat exchanger, a condensing material storer communicated with the condenser, a rectifying tower communicated with the condensing material storer, a silicane storer communicated with the rectifying tower, a silicane heater communicated with the silicane storer, a mixer communicated with the silicane heater, and a hydrogen heater communicated with the mixer; and the mixer is also communicated with the reduction furnace through the heat exchanger. Through the polycrystalline silicon production system, refined trichlorosilane and refined dichlorosilane are mixed according to a prescribed proportion and enter the reduction furnace, so that the quicker deposition rate of silicon can be obtained compared with the method that trichlorosilane serves as a single silicon source, and homogeneous phase nucleation of the method that dichlorosilane serves as a single silicon source is avoided. Besides, compared with the polycrystalline silicon production system adopting a mixed silicon source composed of SiCl4, SiHCl3 and SiH2Cl2, the polycrystalline silicon production system also remarkably improves the production quality of polycrystalline silicon and greatly lowers the energy consumption and production costs.