A semiconductor device from the trench gate type

A semiconductor device from the trench gate type comprising: a first semiconductor layer (101) having a first conductivity type and formed on a semiconductor substrate; a second semiconductor layer (102, 103) having a second conductivity type and adjacent to the first semiconductor layer (101) is disposed; a third semiconductor layer (104) having the first conductivity type and adjacent to the second semiconductor layer (103) is disposed; a plurality of insulated gate (105) extending from a first main surface of said third semiconductor layer (104) in the second semiconductor layer (103), where they penetrate the third semiconductor layer (104); a first region and a second region (115) of said third semiconductor layer (104), respectively, isolated between the adjacent gates are defined (105); a fourth semiconductor layer (111) having the second conductivity type and in contact with the insulated gate (105) in the first region of said third semiconductor layer (104); a first main electrode (109) in electrical contact with the first region of the third semiconductor layer (104) and the fourth semiconductor layer (111); and a second main electrode (100) in electrical contact with the first semiconductor layer (101), wherein the third semiconductor layer in said second region (115) is a floating layer, and the floating layer electrically connected to the first main electrode (109) is connected via a capacitance (206), which is an insulating layer (121) of silicon oxide, the second between the regions of the third semiconductor layer (104) and a polycrystalline silicon layer (122) in contact with the first main electrode (109) is disposed, and wherein a short-circuit resistor 207) is connected in parallel to the capacitance.