l/f7 SPECTRA IN SOME ELECTRONIC COMPONEN!PS.

Low frequency noise measurements were carried out in MESFET’s, GaAs resistors, diffused silicon resistors, etc. The noise spectra are of l/fv type one. The noise spectra are considered to be superpositions of Lorentzian spectra. temperature dependence of the noise in the GaAs and silicon resistors, while the Lorentzian spectrum could not be found in the polysilicon resistors. We have also discussed l/fv noise spectra in the boundaries of the solid. The Lorentzian, l/f and l/f3” spectra are obtained. Our model is based on the spontaneous temperature fluctuation in the boundaries between the contacting spots. The activation energies are determined from the