Optimizing endurance performance of Ga2O3 random resistive access memories by altering oxygen vacancy content

Abstract In this work, we propose an effective way to improve the endurance performance of Ga2O3 resistive random access memories by doping ZnO. Excellent bipolar resistive switching behaviors have been observed in atomic-layer-deposited ZnO-doped Ga2O3 RRAMs, which exhibit large memory windows over 103 and retention time up to 104. Bipolar resistive switching behaviors can be explained by the formation or rupture of conductive filaments composed of Ag atoms and oxygen vacancies. Current – voltage curves suggest Ohmic conductance of the low resistance states, while the conductive mechanism of the high resistance states corresponds to the trap-assisted space charge limited conduction. Furthermore, the reason why the endurance performance of ZnO-doped Ga2O3 RRAMs is better than pure Ga2O3 RRAMs is analyzed.