Phosphorus-doped silicon wafer manufacturing method thereof, manufacturing method and solar cell

The present invention discloses a phosphorus-doped silicon wafer, its production method, a solar cell sheet and manufacturing method thereof. Phosphorus-doped silicon wafer manufacturing method comprises heating the wafer to be doped, prior to purification, phosphor deposition and diffusion cooling step, depositing phosphorus diffusion using POCl3 deposition step as the phosphorus diffusion source and O2 to make the reaction step, the deposition step the volume ratio of POCl3 to be of a decreasing manner O2 diffusion step. Deposition using a diffusion process faster diffusion step at the beginning, as the phosphorus diffuses into the silicon surface of the silicon substrate, the silicon surface to gradually reduce the phosphorus concentration, with a subsequent decrease the concentration of the phosphorus source is deposited onto a silicon wafer substrate reducing the number of phosphorus bottom surface, with respect to the distribution of the current diffusion deposition process, there have been a greater concentration of phosphorus added POCl3 source impurity concentration gradient of the concentration of phosphorus in the large surface of the wafer and the interior of the substrate, to obtain a better electrical parameters to improve the conversion efficiency of the solar cell.