Domain structure and leakage mechanism of BiFeO3 thin films deposited at different temperatures

Pulsed laser deposition method was carried out to fabricate BiFeO3 (BFO) thin films at different temperatures. Different deposition temperatures resulted in different crystal and domain structures, which affected the leakage mechanism and ferroelectric properties. Attributed to the screen effect of conductive domain walls, the films deposited at high temperature exhibited low leakage. For BFO films, an Ohmic conduction was the main conduction type at low electric field, and a Space-Charge-Limited Current type dominated at higher electric field.