Anomalous Hall effect in Cu doped Bi 2 Te 3 Topological Insulator.

The angle resolved photo-emission spectroscopy (ARPES) study and magneto-transport properties of Bi2CuxTe3-xhave been investigated. ARPES study indicates the clear existence of surface states in the as-prepared samples. The estimated band-gap from ARPES is found to be ~5 meV and 16 meV respectively for x=0.03 and x=0.15 samples. Presence of larger Cu concentration (x=0.15) introduces magnetic ordering. Observed non-linearity in the Hall data is due to the existence of anomalous Hall effect which can be attributed to the 2D transport. The observed magneto-transport features might be related to the surface carriers which is confirmed by ARPES study.