MOCVD growth of Ga2Se3 on GaAs(100) and GaP(100): a Raman study

Abstract Due to its luminescence in the blue-green spectral range, Ga 2 Se 3 has become a subject of extensive research. Thin epitaxial Ga 2 Se 3 layers were grown on GaAs(100) and GaP(100) for the first time by metalorganic chemical vapour deposition (MOCVD). The structural and optical properties were investigated by transmission electron microscopy, Raman spectroscopy and photoluminescence (PL). Raman spectra were taken in a temperature range from 100 K to 600 K using excitation energies of Ar + and Kr + ion lasers. Additionally the photoluminescence of the layers was measured using ultraviolet (UV) excitation. The results of this study are compared and discussed with those of other growth techniques.