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Consideration of gate insulator on 4H-SiC Si face using a SiNx layer by ALD
Consideration of gate insulator on 4H-SiC Si face using a SiNx layer by ALD
2018
Teruaki Kumazawa
Mituo Okamoto
Miwako Iijima
Yohei Iwahashi
Shinzi Fujikake
Tsuyoshi Araoka
Tae Tawara
Hiroshi Kimura
Shinsuke Harada
Hajime Okumura
Keywords:
Insulator (electricity)
Electronic engineering
Materials science
gate insulator
Optoelectronics
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