High quality compressively strained InP-based GaInAs(P)/GaInAsP multi-quantum well laser structures grown by metalorganic vapor phase epitaxy

The growth and characterization of strained GaInAs and GaInAsP multiquantum well (MQW) laser structures has been investigated. The use of triple axis x-ray diffraction (XRD), in addition to the conventional high resolution double crystal XRD, yields further information about the structural integrity of these complex structures. Buried heterostructure lasers with eight GaInAsP wells (+1.0% strain, 80A thick) exhibit a record low threshold current of 3.1 mA. By using a constant As/P ratio in the wells and barriers of an MQW laser structure, we have shown that the structure can be annealed at 700°C for 1 h with only a minimal shift (-4 nm) in the photoluminescence emission wavelength. Conventional lattice-matched GaInAs/GaInAsP MQW structures exhibit a shift of-46 nm under the same conditions.