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Layout Dependence of SiGe Strain Effect and STI Induced Defects in 45nm p-PMOSFETs with Strain SiGe Source/Drain
Layout Dependence of SiGe Strain Effect and STI Induced Defects in 45nm p-PMOSFETs with Strain SiGe Source/Drain
2008
C. Y. Cheng
Y. K. Fang
J.-C. Hsieh
Yi-Ming Sheu
H. Hsia
W. M. Chen
S.-S. Lin
C.S. Hou
Keywords:
Electronic engineering
Strain (chemistry)
Materials science
strain effect
Optoelectronics
Correction
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