Epitaxial lateral overgrowth of AlxGa1- xN (x > 0.2) on sapphire and its application to UV-B-light-emitting devices

Abstract Crack-free and low-dislocation-density Al x Ga 1− x N with x higher than 0.2 was successfully grown on a grooved AlN template prepared on a sapphire substrate. Efficient UV-B-light-emitting diodes can be fabricated on such an AlGaN layer.