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Characterization of MoS 2 /Si and WS 2 /Si Heterojunction Photodetectors Fabricated by High-Working Pressure Plasma-Enhanced CVD
Characterization of MoS 2 /Si and WS 2 /Si Heterojunction Photodetectors Fabricated by High-Working Pressure Plasma-Enhanced CVD
2018
Soyeong Kwon
Jungeun Song
Dongrye Choi
Eunah Kim
Yonghun Kim
Byung-Jin Cho
Dong Wook Kim
Keywords:
Optoelectronics
Plasma
Photodetector
working pressure
Heterojunction
Materials science
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