Defect management of EUV mask
2012
Extreme Ultraviolet Lithography (EUVL) is a promising technology for the fabrication of ULSI devices with 20nm
half-pitch node. One of the key challenges before EUVL is to achieve defect-free masks. There are three main
categories of mask defects: multilayer defects which cause phase defects, absorber pattern defects, and particles during
blank/mask fabrication or mask handling after mask fabrication. It is important to manage multilayer defect because
small multilayer defects are difficult to be identified by SEM/AFM after mask patterning and can impact wafer
printing.
In this paper, we assess blank defect position error detected by 3 rd generation blank inspection tool, using blank
defect information from blank supplier and 199nm wavelength patterned mask inspection tool NPI-7000. And we rank
blank defect in the order of projection defect size to multilayer in order to estimate blank defect printability. This
method avoids overestimating the number of potential killer defects that hardly be identified by SEM/AFM under the
condition that EUV-AIMS is not available.
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