Parasitic Channel Induced by Spin‐On‐Glass in a Double‐Level Metallization Complimentary Metal Oxide Semiconductor Process Its Formation and Method of Suppression

We studied the degradation mechanism and the suppression method for parasitic channel formation by inorganic spin-on-glass (SOG) in complimentary metal oxide semiconductor (CMOS) devices with double-level metallization using test structures and a high frequency C-V technique. The positive charge induced near the Si/SiO, interface in the field isolation region caused the parasitic channel. We propose a new mechanism that atomic hydro en created by the SOG film diffuses to the Si/SiO, interfacial region and generates the positive charge. There are two distinct mechanisms for the creation of the atomic hydrogen by the SOG films with different cap oxide