The semiconductor light emitting device

The semiconductor light emitting device (10), comprising: a GaP substrate (1); an active layer (4) which is disposed above the GaP substrate (1) and containing a n-type layer and a p-type layer of a compound semiconductor; and an ELO layer (3), which is arranged between the GaP substrate (1) and the active layer (4) and by a lateral epitaxial growth (ELO) is formed.