Decoupled tunneling and GIDL effects for 28nm high-k stacked nMOSFETs

One interesting result for 28nm high-k stacked n-channel MOSFET with W/L= 0.5/0.12 (μm/μm) electrically sensed demonstrates the tunneling and GIDL effects which can effectively be decoupled by gate bias at accumulation mode. Due to the drain bias assisted, the decoupling performance in this work is more apparent. In the low gate bias, the GIDL effect is clearer; reversely, the tunneling effect is dominant at the high gate bias.