Annealing Effects of Indium-Tin Oxide Films Produced by Atmospheric RF Plasma Deposition Technique

Thin-films of indium-tin oxide (ITO) on soda-lime-silicate (SLS) glass were fabricated using an atmospheric RF plasma mist deposition process. Some of the films were deposited at substrate temperatures between 400 C and 500 C, and were subsequently annealed at 400 C and 530 C for 1 hour. Conductivity was improved due to post-annealing. Film thickness, particle size, film morphology and crystallite size were characterized. The structural changes on the glass and the ITO film were investigated by DRIFT spectroscopy.