Polishing of InSb in the K2Cr2O7 - HBr - HCl (oxalic acid) solutions

Dissolution of InAs in the K 2 Cr 2 O 7 -HBr-HCl (oxalic acid) solutions is studied in reproducible hydrodynamics conditions. The surfaces of equal etching rate are constructed using mathematical planning of experiment, andthe limiting stages of the dissolution process are determined. The kinetic behaviour of indicated semiconductors depending on the mixing rate and temperature of solution was investigated and it was shown that the dissolution of these semiconductor compounds in the solutions of the investigated systems is limited by the diffusion stages. The dissolution rates of InSb in such solutions distinguish weakly from each other and are within the interval of 0.5-6 μm/min. The solutions of K 2 Cr 2 O 7 -HBr-HCl (oxalic acid) systems can be employed for the developing of polishing solutions for the indium antimonide treatment with small etching rate.