Current transport characteristics of SiGeC/Si heterojunction diode

F. Chen,B. A. Orner,D. Guerin,Ayaz Muhammad Khan,Paul R. Berger,S. Ismat Shah,J. Kolodzey

Current transport characteristics of SiGeC/Si heterojunction diode

1996

F. Chen
B. A. Orner
D. Guerin
Ayaz Muhammad Khan
Paul R. Berger
S. Ismat Shah
J. Kolodzey

The characteristics of heterojunction diodes fabricated from p-type epitaxial Si/sub 0.07/Ge/sub 0.91/C/sub 0.02/ alloy grown by molecular beam epitaxy on n-type Si

Keywords:

Analytical chemistry
Chemistry
Hall effect
Electronic engineering
Heterojunction
Epitaxy
Leakage (electronics)
Molecular beam epitaxy
Diode
Silicon
Alloy
Rectification
semiconductor materials
heterojunction diode
Optoelectronics

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