A semiconductor device having a transistor cell that includes a source contact in a trench method of manufacturing the semiconductor device and integrated circuit

A semiconductor device (1) comprises a transistor cell (10) in a semiconductor substrate (100) having a first main surface (110). The transistor cell (10) comprises a source region (201), a source contact connected to the source region (201) is electrically connected, a drain region (205), a body region (220) and a gate electrode (210) in a gate trench (212) in the first major surface, the body region (220) adjacent thereto. The gate electrode (210) is adapted to control a conductivity of a channel in the body region (220). A longitudinal axis of the gate trench (212) extending in a first direction parallel to the first main surface. The source region (201), the body region (220) and the drain region (205) are arranged along the first direction. The source contact (202) comprises a source contact portion (202) and a second source contact portion (130). The second source contact portion (130) is disposed on a second main surface (120) of the semiconductor substrate (100). The first source contact portion (202) comprising a conductive source material (115) in direct contact with the source region (201) and a portion of the semiconductor substrate (100) disposed between the conductive source material (115) and the second source contact portion (130).